Design and Fabrication of All Organic Field Effect Transistor
Abstract
All organic field effect transistor consist of poly-3-hexyloxythiophene, undoped poly-3,3”-didecyl-2,2’,5’,2”-
terthiophene and polypyrrole has been successfully developed. Poly-3-hexyloxythiophene was applied as gate material. Undoped poly-3,3”-didecyl-2,2’,5’,2”-terthiophene was used as insulating layer and polypyrrole was applied as source-drain material. The multilayer polymers were deposited onto gold source-drain and gate electrodes by electropolymerization method. The spaces between the gold electrodes were 50 μm. The transistor shows a current amplification upon increasing gate voltages. Good conductivity stability upon increasing gate voltages was observed. Overall the field effect transistor has properties that similar to inorganic field effect transistor.
terthiophene and polypyrrole has been successfully developed. Poly-3-hexyloxythiophene was applied as gate material. Undoped poly-3,3”-didecyl-2,2’,5’,2”-terthiophene was used as insulating layer and polypyrrole was applied as source-drain material. The multilayer polymers were deposited onto gold source-drain and gate electrodes by electropolymerization method. The spaces between the gold electrodes were 50 μm. The transistor shows a current amplification upon increasing gate voltages. Good conductivity stability upon increasing gate voltages was observed. Overall the field effect transistor has properties that similar to inorganic field effect transistor.
Keywords
organic field effect transistor; alkylthiophene; alkoxythiophene; electropolymerization
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DOI: http://dx.doi.org/10.12962/j24604682.v7i1.898
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